Host-Sensitized Luminescence of Dy3¿ in Nanocrystalline b-Ga2O3 Prepared by a Pechini-Type Sol-Gel Process
نویسندگان
چکیده
Nanocrystalline undoped b-Ga2O3 and Dy -doped b-Ga2O3 were prepared through a Pechini-type sol-gel process. All the samples began to crystallize at 600°C, and the crystallinity increased with the increase of annealing temperatures until 1000°C. Field emission-scanning electron microscopy study revealed that the b-Ga2O3 :Dy 31 sample is composed of aggregated particles with sizes ranging from 40 to 80 nm and spherical morphology. Undoped b-Ga2O3 sample shows a strong blue emission peaking at 438 nm. The Dy, mainly occupied the octahedral Ga sites in b-Ga2O3 , shows its characteristic emissions in the blue 460-505 nm (F9/2H15/2) and yellow 570-0600 nm ( F9/2H13/2) regions due to an efficient energy transfer from the b-Ga2O3 host lattices. The optimum concentration for the luminescence Dy is determined to be 2 atom % of Ga in Ga2O3 host. © 2004 The Electrochemical Society. @DOI: 10.1149/1.1847674# All rights reserved.
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